random access memories

The Single Event Effect ( SEE ) simulation experiment was carried out on proton accelerators for Static Random Access Memories ( SRAMs ) .

应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。

Experimental study on proton single event effects in static random access memories

静态随机存取存储器质子单粒子效应实验研究

High dielectric constant thin films have been used in high-density dynamic random access memories widely .

高介电常数薄膜广泛应用于动态随机存储器中。

Ferroelectric thin films and electrodes for random access memories

存储器用铁电薄膜及电极材料的研究

Diagnostic testing of MOS random access memories

MOS随机存储器的诊断测试

With the rapid semiconductor technology development , the density of the Random access memories ( RAM ) has been higher and higher .

随着半导体技术的快速深入发展，随机存储器记忆体容量越来越大。

Ferroelectric materials are extremely important information functional materials with promising applications in many fields , such as ferroelectric random access memories .

铁电材料是一种十分重要的信息功能材料，在铁电随机存储等诸多领域具有广泛的应用前景。

In the large family of semiconductor memories , Static random access memories ( SRAMs ) are an indispensable part because of their broad applications .

在半导体存储器这一大家庭中，静态存储器由于其广泛的应用成为其中不可或缺的重要一员。

Because CMR effects are great valuable in industrial demand , e. g. the magnetic memory , magnetic random access memories , magnetic sensors and magnetic refrigeration ;

由于巨磁电阻效应在工业上具有广泛的应用背景，例如信息存储领域中的磁记录，磁随机存储，磁传感器，以及磁制冷方面的应用；

High-dielectric-constant oxides are very desirable for the application in microelectronics , especially for the application in dynamic random access memories ( DRAM ) devices .

因此高介电常数材料在微电子器件中，特别是在动态随机存储器（DRAM）中有着广泛的应用前景。

Spin valve with a low saturation field and high sensitivity has become the research hotspot due to its valuable application in magnetic record reading heads , magnetic random access memories .

具有低饱和场、高灵敏度的自旋阀巨磁电阻材料，在磁记录读出磁头、随机存储器、磁传感器等方面具有重要的应用价值，已成为国内外研究热点。

The song is from the duo 's 2013 " Random Access Memories " album , which in many ways was a culmination of their career .

这首歌来自该组合2013年的专辑《超时空记忆》，这张专辑从很多方面来看都是他们音乐事业的巅峰之作。

Expermental methods were emphatically described for measuring the proton Single Event Upset ( SEU ) cross section in Static Random Access Memories ( SRAMs ) .

描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。

Ferroelectric fatigue is much fatal for the electric apparatus based on the switchable polarization , such as non-volatile random access memories ( NVFRAM ) .

铁电材料的疲劳特性是影响依赖可反转极化工作的电子器件性能的关键，例如非易失性铁电存储器。

Recently , the ferroelectric property of the ferroelectric thin films and their applications in memory devices , especially in ferroelectric non-volatile random access memories ( FRAM ), have been widely studied .

铁电薄膜材料的铁电性质及其在存储器方面的应用，尤其是在非挥发性铁电存储器（FRAM）中的应用，近年来一直是许多材料研究人员关注的焦点之一。

The heterostructures based on half-metals and semiconductors is very promising in spin-injection , p-n heterostructures , and magnetoresistive random access memories .

半金属-半导体异质结在自旋注入、p-n结以及磁随机存储中具有潜在的应用价值。

With the trend of size reduction of many microelectronic devices , high-dielectric-constant oxides have become increasingly important in microelectronics , especially in the application of dynamic random access memories ( DRAM ) devices .

随着微电子器件的尺寸进一步的减小，高介电常数材料在微电子器件中，特别是在动态随机存储器（DRAM）的应用中，扮演着重要的角色。

To overcome the limitations of conventional semiconductor devices , which are based on charge storage , various new nonvolatile-memory ( NVM ) devices such as phase-change , polymer , magnetic , and resistance random access memories ( ReRAM ) have been investigated .

为了克服基于电荷存储的传统半导体存储器件的限制，各种新型的非易失性存储器件应运而生，其中包括相变存储器、聚合体存储器、磁存储器和电阻存储器。

Ferroelectric Random Access Memories ( FeRAM ) is a new kind of non-volatile memories which possesses excellent properties of low operating voltage , low power consumption , long-time retention , quick writing-operation and outstanding anti-radiation characteristics , and is very suitable for embedded application .

铁电存储器是一种具有操作电压低、功耗低、信息保持时间长、写入速度快、抗辐射等优异特性的新型非挥发存储器，非常适合应用于嵌入式平台。

In recent years , the family of bismuth layer-structured ferroelectrics ( BLSFs ) has attracted much attention for their potential use in high temperature piezoelectric devices and ferroelectric random access memories ( FeRAMs ), because of their relatively high Curie point and excellent fatigue endurance property , respectively .

近年来，铋系层状铁电体（BLSFs）由于其相对较高的居里点和出色的抗疲劳特性，可能潜在应用于高温压电器件及铁电随机存储器而引起人们越来越多得研究兴趣。